Improving the Accuracy of Microhardness Measurement of Nanoelectronic Elements by the Silicic Probes of Atomic-Force Microscopy, that is Modified by Carbon Coverage

EasyChair Preprint 4970

Abstract

Possibility of measuring of microhardness of different surfaces of elements of nanoelec-tronics by means of method of atomic-force microscopy is considered in the article. Possibility of application of silicic probes that is modified by carbon coverage is first shown, that allows to conduct complex researches of surfaces and ultrathin coverages. Dependence of measuring exactness is shown on the microhardness of the investigated material. The range of measuring of microhardness of elements of nanoelectronics is set by such probes. Measuring exactness is megascopic to 20-28%, which is a range from 100 MPа to 39 GPа. It extends the nomenclature of materials at determination of its microhardness by atomic-force microscopy.

Keyphrases: Accuracy, Microhardness, Nanoelectronics, atomic force microscopy, silicic probe

@booklet{EasyChair:4970,
  author    = {Maksym Bondarenko and Victor Antonyuk and Iuliia Bondarenko and Iryna Makarenko and Sergii Vysloukh},
  title     = {Improving the Accuracy of Microhardness Measurement of Nanoelectronic Elements by the Silicic Probes of Atomic-Force Microscopy, that is Modified by Carbon Coverage},
  howpublished = {EasyChair Preprint 4970},
  year      = {EasyChair, 2021}}