Impact of GaAsSb Composition on Band Alignment and Heterostructure Performance

EasyChair Preprint 14483

Abstract

Gallium Arsenide Antimonide (GaAsSb) alloys have garnered significant attention due to their tunable bandgap and ability to engineer band alignment in heterostructures, making them highly valuable in optoelectronic and electronic devices. This study investigates the impact of varying GaAsSb composition on the band alignment in heterostructures and the effects on device performance. By altering the antimony (Sb) content, the conduction and valence band edges shift, influencing whether Type I, Type II, or broken-gap alignment occurs in GaAsSb-based heterostructures, particularly with materials like GaAs, InP, and InAs. These shifts directly affect electron and hole confinement, crucial for optimizing the efficiency of devices such as lasers, photodetectors, and high-electron-mobility transistors (HEMTs). For instance, GaAsSb-based lasers benefit from composition-tuned emission wavelengths, while photodetectors exhibit improved responsivity and dark current performance. Additionally, the study examines how quantum confinement in nanostructures, strain from lattice mismatch, and temperature variations further influence band alignment. Despite the challenges in material growth and defect control, optimizing GaAsSb composition presents a promising path for the advancement of high-performance heterostructures in next-generation semiconductor technologies.

Keyphrases: GaAsSb, Quantum wires, quantum confinement, quantum dots, quantum wells

@booklet{EasyChair:14483,
  author    = {Docas Akinyele and Godwin Olaoye},
  title     = {Impact of GaAsSb Composition on Band Alignment and Heterostructure Performance},
  howpublished = {EasyChair Preprint 14483},
  year      = {EasyChair, 2024}}