Techniques to Achieve Uniformity and High Crystal Quality in Nanowires

EasyChair Preprint 14401

Abstract

Nanowires, with their distinctive one-dimensional structure, have emerged as critical components in a wide array of technological applications, including semiconductor devices, photovoltaic cells, and nanophotonics. Their unique properties—such as high surface-to-volume ratios and quantum confinement effects—make them highly attractive for next-generation electronic and optoelectronic devices. However, the performance and reliability of nanowire-based devices are profoundly influenced by the uniformity and crystal quality of the nanowires.

Uniformity in nanowires refers to their consistent diameter, length, and overall structural integrity across a batch or substrate. Achieving high uniformity is crucial for ensuring predictable and reproducible device performance. Crystal quality, on the other hand, pertains to the defect-free nature of the nanowire's crystalline lattice. High crystal quality minimizes defects such as dislocations, vacancies, and grain boundaries, which can adversely affect the electrical and optical properties of the nanowires.

The challenge of achieving uniformity and high crystal quality arises from the complex interplay of growth parameters and synthesis techniques. Various growth methods, such as Chemical Vapor Deposition (CVD), Molecular Beam Epitaxy (MBE), and solution-based approaches, offer different advantages and limitations in controlling these attributes. Additionally, techniques like annealing, doping, and strain engineering play critical roles in enhancing crystal quality, while template-assisted growth and precise control of growth conditions are vital for achieving uniformity.

Keyphrases: Electronic properties, GaAsSb, carrier mobility, effective mass, optical band gap

@booklet{EasyChair:14401,
  author    = {John Owen},
  title     = {Techniques to Achieve Uniformity and High Crystal Quality in Nanowires},
  howpublished = {EasyChair Preprint 14401},
  year      = {EasyChair, 2024}}