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Development of GaN MOS-HEMTs Transistors Based Biosensors for the Detection of a Novel SARS-Cov-19 Virus

EasyChair Preprint 10815

8 pagesDate: August 31, 2023

Abstract

In this paper, the electrical biosensing device is modeled and analyzed for AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) based biosensors with different cavity heights. In this work, AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs), with the cavity under the gate electrode is studied for its sensitivity analysis and viability as a biosensor. The analytical model has been developed to enhance the sensitivity of the electrical biosensing device, by using dielectric modulation approach with different cavity height (hcavity). The analytical model results are in good agreement with Atlas-TCAD for output characteristics for the proposed cavity height hcavity= (5, 7, 9, 11 and 13) nm. The maximum drain current on sensitivity which has been achieved in this work with hcavity= 13 nm, while that better sensitivity with hcavity= 5 nm shift up to 81.67%. The MOS-HEMTs transistors based biosensor structures proposed are simulated and analyzed by using commercially available Atlas-TCAD and compared with developed analytical model.

Keyphrases: AlGaN/GaN, Biosensors, Corona Virus, MOS-HEMTs, SARS-CoV-2, dielectric constant, sensitivity

BibTeX entry
BibTeX does not have the right entry for preprints. This is a hack for producing the correct reference:
@booklet{EasyChair:10815,
  author    = {Mouffoki Faiza and Bouguenna Driss},
  title     = {Development of GaN MOS-HEMTs Transistors Based Biosensors for the Detection of a Novel SARS-Cov-19 Virus},
  howpublished = {EasyChair Preprint 10815},
  year      = {EasyChair, 2023}}
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