A Study of Silicon Effect as a Switch on Folded Dipole Antenna

EasyChair Preprint 6970, version 2

Abstract

With the increasing use of mobile phones had to improve the quality of compiling devices on mobile phones. So that mobile phones can be of good quality. One of the devices on mobile phones that are needed to be improved is the antenna. The antenna is one key component of mobile phones. Various types of antennas have been designing and developing. One of them is a microstrip antenna. In this study, a folded dipole microstrip antenna with a Coplanar Stripline (CPS) structure would be design to use an FR-4 substrate and two plates of copper as a transmission medium of antenna based on the Finite-difference time-domain (FDTD) method. A silicon patch was added and located between two plates of copper as a switch on the microstrip antenna. There are two types of silicon used in this study, pure silicon with a resistivity of 2.3 × 10⁵ Ω.cm and silicon of  P-type doped by boron with a resistivity of 1 – 30 Ω.cm. For pure silicon, the frequency shift was 0.9 GHz, the Return Loss was -21.0746 dB, the VSWR was 1.1938, and the bandwidth was 0.4099 GHz. Then, pure silicon was irradiated with an infrared laser of 808 nm so that it can result in a frequency shift of 4.9 GHz. For p-type silicon can be shown that the most sensitive resistivity value for silicon of P-type was 15 Ω.cm, with the frequency shift was 5.84 GHz, the Return Loss was -43.9106 dB, the VSWR was 1.0128, and the bandwidth was 0.9455 GHz. Then, the p-type silicon was irradiated with an infrared laser of 808 nm so that it can result in a frequency shift of 0.06 GHz.

Keyphrases: Microstrip antenna, Silicon, folded dipole, switch

@booklet{EasyChair:6970,
  author    = {Aslam Chitami Priawan Siregar and Gatut Yudoyono and Yono Hadi Pramono},
  title     = {A Study of Silicon Effect as a Switch on Folded Dipole Antenna},
  howpublished = {EasyChair Preprint 6970},
  year      = {EasyChair, 2021}}